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| EL2002C EL2002C Low Power 180 MHz Buffer Amplifier Features 180 MHz bandwidth 2000 V ms slew rate Low bias current 3 mA typical 100 mA output current 5 mA supply current Short circuit protected Low cost Stable with capacitive loads Wide supply range g5V to g15V No thermal runaway General Description The EL2002 is a low cost monolithic high slew rate buffer amplifier Built using the Elantec monolithic Complementary Bipolar process this patented buffer has a b 3 dB bandwidth of 180 MHz and delivers 100 mA yet draws only 5 mA of supply current It typically operates from g15V power supplies but will work with as little as g5V This high speed buffer may be used in a wide variety of applications in military video and medical systems Typical examples include fast op-amp output current boosters coaxial cable drivers and A D converter input buffers Elantec's products and facilities comply with MIL-I-45208A and other applicable quality specifications For information on Elantec's processing see the Elantec document QRA-1 Elantec's Processing Monolithic Integrated Circuits Applications Op amp output current booster Cable line driver A D input buffer Isolation buffer Connection Diagrams EL2002 DIP Pinout EL2002 SOL Pinout Ordering Information Part No EL2002ACN EL2002CM EL2002CN Temp Range 0 C to a 75 C 0 C to a 75 C 0 C to a 75 C Package P-DIP 20-Lead SOL P-DIP Outline MDP0031 MDP0027 MDP0031 2002 - 1 Top View 2002 - 2 Top View December 1995 Rev D Manufactured Under U S Patent No 4 833 424 and U K Patent No 2217134 Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ``controlled document'' Current revisions if any to these specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation 1989 Elantec Inc EL2002C Low Power 180 MHz Buffer Amplifier Absolute Maximum Ratings VS VIN IIN PD Supply Voltage (V a bVb) Input Voltage (Note 1) Input Current (Note 1) Power Dissipation (Note 2) Output Short Circuit Duration (Note 3) g18V or 36V g15V or VS g50 mA TA TJ TST See Curves Continuous Operating Temperature Range EL2002AC EL2002C Operating Junction Temperature Storage Temperature 0 C to a 75 C 150 C b 65 C to a 150 C Important Note All parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJ e TC e TA Test Level I II III IV V Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002 100% production tested at TA e 25 C and QA sample tested at TA e 25 C TMAX and TMIN per QA test plan QCX0002 QA sample tested per QA test plan QCX0002 Parameter is guaranteed (but not tested) by Design and Characterization Data Parameter is typical value at TA e 25 C for information purposes only Electrical Characteristics VS e g15V Parameter Description VIN VOS Offset Voltage EL2002A EL2002AC EL2002 EL2002C 0 Load % RS e 50X unless otherwise specified Limits Min b 15 b 20 b 40 b 50 b 10 b 15 b 15 b 20 Test Conditions Temp 25 C TMIN TMAX 0 % 25 C TMIN TMAX IIN Input Current EL2002A EL2002AC EL2002 EL2002C 0 % 25 C TMIN TMAX 0 % 25 C TMIN TMAX RIN Input Resistance a 12V EL2002AC EL2002C Max a 15 a 20 Typ 5 Test Level I III I III I III I III I III Units mV mV mV mV mA mA mA mA MX MX VV TD is 3 3in VV VV VV 10 a 40 a 50 3 a 10 a 15 5 a 15 a 20 100X 25 C TMIN TMAX 1 01 0 990 0 985 0 85 0 83 3 AV1 Voltage Gain g12V % 25 C TMIN TMAX 0 998 I III AV2 Voltage Gain g10V 100X 25 C TMIN TMAX 0 93 I III 2 EL2002C Low Power 180 MHz Buffer Amplifier Electrical Characteristics VS e g15V Parameter Description VIN AV3 Voltage Gain with VS e g5V Output Voltage Swing g3V RS e 50X unless otherwise specified Limits Min 0 83 0 80 g10 g9 5 g11 Contd EL2002AC EL2002C Max Test Level I III I III Units Test Conditions Load 100X Temp 25 C TMIN TMAX g12V Typ 0 91 VV VV V V X X mA mA mA mA dB dB TD is 3 5in ns ns V ms VO 100X 25 C TMIN TMAX ROUT Output Resistance g2V 100X 25 C TMIN TMAX 8 13 15 I III I III IOUT Output Current g12V (Note 4) 25 C TMIN TMAX a 100 g95 a 160 IS Supply Current 0 % 25 C TMIN TMAX 5 75 10 II III I III PSRR Supply Rejection (Note 5) Rise Time Propagation Delay Slew Rate (Note 6) 0 % 25 C TMIN TMAX 60 50 75 tr td SR 0 5V 0 5V g10V 100X 100X 100X 25 C 25 C 25 C 1200 28 15 2000 V V IV Note 1 If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds g7 5V then the input current must be limited to g50 mA See the applications section for more information Note 2 The maximum power dissipation depends on package type ambient temperature and heat sinking See the characteristic curves for more details Note 3 A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited Note 4 Force the input to a 12V and the output to a 10V and measure the output current Repeat with b12 VIN and b10V on the output Note 5 VOS is measured at VS a e a 4 5V VSb e b4 5V and VS a e a 18V VSb e 18V Both supplies are changed simultaneously Note 6 Slew rate is measured between VOUT e a 5V and b5V 3 EL2002C Low Power 180 MHz Buffer Amplifier Typical Performance Curves Offset Voltage vs Temperature Voltage Gain vs Temperature Output Voltage Swing vs Temperature Supply Current vs Supply Voltage Voltage Gain vs Input Voltage Voltage Gain vs Source Resistance Input Bias Current vs Input Voltage at Various Temperatures Input Bias Current vs Input Voltage gSlew Rate vs Supply Voltage 2002 - 4 4 EL2002C Low Power 180 MHz Buffer Amplifier Typical Performance Curves Slew Rate vs Load Capacitance Contd Voltage Gain vs Frequency for Various Resistive Loads Voltage Gain vs Frequency for Various Capacitive Loads RL e 100X Voltage Gain vs Frequency for Various Capacitive Loads RL e % Phase Shift vs Frequency for Various Capacitive Loads b 3 dB Bandwidth vs Supply Voltage Power Supply Rejection Ratio vs Frequency Output Impedance vs Frequency Reverse Isolation vs Frequency 2002 - 5 5 EL2002C Low Power 180 MHz Buffer Amplifier Typical Performance Curves Small Signal Output Resistance vs Output Current Contd 8-Lead Plastic DIP Maximum Power Dissipation vs Ambient Temperature 20-Lead SOL Maximum Power Dissipation vs Ambient Temperature Short Circuit Current vs Temperature 2002 - 6 Large Signal Response Small Signal Response OUTPUT RL e 100X CL e 10 pF f e 20 MHz OUTPUT RL e % CL e 220 pF f e 5 MHz 2002 - 9 2002 - 8 6 EL2002C Low Power 180 MHz Buffer Amplifier Burn-In Circuit Power Supplies The EL2002 may be operated with single or split supplies with total voltage difference between 10V (g5V) and 36V (g18V) It is not necessary to use equal split value supplies For example b 5V and a 12V would be excellent for signals from b 2V to a 9V 2002 - 10 Simplified Schematic Bypass capacitors from each supply pin to ground are highly recommended to reduce supply ringing and the interference it can cause At a minimum 1 mF tantalum capacitor with short leads should be used for both supplies Input Characteristics The input to the EL2002 looks like a resistance in parallel with about 3 5 pF in addition to a DC bias current The DC bias current is due to the miss-match in beta and collector current between the NPN and PNP transistors connected to the input pin The bias current can be either positive or negative The change in input current with input voltage (RIN) is affected by the output load beta and the internal boost RIN can actually appear negative over portions of the input range typical input current curves are shown in the characteristic curves Internal clamp diodes from the input to the output are provided These diodes protect the transistor base emitter junctions and limit the boost current during slew to avoid saturation of internal transistors The diodes begin conduction at about g2 5V input to output differential When that happens the input resistance drops dramatically The diodes are rated at 50 mA When conducting they have a series resistance of about 20X There is also 100X in series with the input that limits input current Above g7 5V differential input to output additional series resistance should be added 2002 - 11 Application Information The EL2002 is a monolithic buffer amplifier built on Elantec's proprietary Complementary Bipolar process that produces NPN and PNP transistors with essentially identical DC and AC characteristics The EL2002 takes full advantage of the complementary process with a unique circuit topology Elantec has applied for two patents based on the EL2002's topology The patents relate to the base drive and feedback mechanism in the buffer This feedback makes 2000 V ms slew rates with 100X loads possible with very low supply current Source Impedance The EL2002 has good input to output isolation When the buffer is not used in a feedback loop capacitive and resisitive sources up to 1 MHz present no oscillation problems Care must be used in board layout to minimize output to input coupling CAUTION When using high source impedances (RS l 100 kX) significant gain errors can be observed due to output offset load resistor and the action of the boost circuit See typical performance curves 7 EL2002C Low Power 180 MHz Buffer Amplifier EL2002 Macromodel Connections a input TAB WIDE l l l l a Vsupply l l l b Vsupply l l output l subckt M2002 2 1 4 7 Input Stage e1 10 0 2 0 1 0 r1 10 0 1K rh 10 11 150 ch 11 0 2pF rc 11 12 100 cc 12 0 3pF e2 13 0 12 0 1 0 Output Stage q1 4 13 14 qp q2 1 13 15 qn q3 1 14 16 qn q4 4 15 19 qp r2 16 7 1 r3 19 7 1 i1 1 14 2mA i2 15 4 2mA Bias Current iin a 2 0 3uA Models model qn npn(is e 5eb15 bf e 150 rb e 200 ptf e 45 tf e 0 1nS) model qp pnp(is e 5eb15 bf e 150 rb e 200 ptf e 45 tf e 0 1nS) ends 8 TD is 3 9in EL2002C Low Power 180 MHz Buffer Amplifier EL2002 Macromodel Contd 2002 - 12 9 BLANK 10 BLANK 11 EL2002C EL2002C Low Power 180 MHz Buffer Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown Elantec Inc reserves the right to make changes in the circuitry or specifications contained herein at any time without notice Elantec Inc assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement WARNING Life Support Policy December 1995 Rev D Elantec Inc 1996 Tarob Court Milpitas CA 95035 Telephone (408) 945-1323 (800) 333-6314 Fax (408) 945-9305 European Office 44-71-482-4596 12 Elantec Inc products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec Inc Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death Users contemplating application of Elantec Inc products in Life Support Systems are requested to contact Elantec Inc factory headquarters to establish suitable terms conditions for these applications Elantec Inc 's warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages Printed in U S A |
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